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Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale.
This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization.
Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.
- Sales Rank: #3569329 in Books
- Brand: Brand: CRC Press
- Published on: 2012-11-28
- Original language: English
- Number of items: 1
- Dimensions: 9.45" h x .88" w x 6.27" l, .0 pounds
- Binding: Hardcover
- 320 pages
- Used Book in Good Condition
Review
"… an immensely useful book for the researcher in this field and even for some like me who do not work exactly in this area. Any scientist interested in strain modulation of device properties will value this book."
―Supriyo Bandyopadhyay, Virginia Commonwealth University
"… a timely bridge from the conventional MOSFETs to advanced strain-engineered MOSFETs to non-classical multiple gate devices to FinFETs. … I strongly recommend this book."
―Dr. Enrique MIRANDA, Universitat Aut�noma de Barcelona
Most helpful customer reviews
0 of 0 people found the following review helpful.
Rent the book, don't buy it.
By D. Dobkin
This is not a terribly good book, although it has a good bit of useful information scattered throughout. The text is readable, but often repetitive. It frequently seems as if the authors have forgotten what they wrote in one section by the time they've moved on to the next. Some chapters appear to have been written 7-8 years ago when industrial use of strained-silicon devices was just starting, so that the technology is presented as promising rather than proven. Nice introductory discussion of stress and strain tensor analysis for those of us who have long forgotten what little we knew about elasticity. There are a couple of chapters on modeling and variability that contain some nifty graphs of how key parameters (e.g. ION and IOFF, effective oxide thickness, and so on) have changed with the different process nodes, but no description of what role strained silicon has played in maintaining these trends -- a curious oversight for a book on this topic. Almost all the data seems to come from PhD theses -- not necessarily a bad thing, but where are the actual industry results? I imagine this was done to avoid any copyright issues, but, much as I like to dump on IEEE, they're actually pretty good about providing permission to use specific data and graphs as long as you provide attribution in return.
So I'm glad I only rented the book. Worth $40 but not > $100.
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